Sputtering Yields

The following table of common target materials is useful in making comparisons between deposition processes. The second column shows the maximum theoretical Density of each material. While this density has no bearing on rate, higher density targets (as close as possible to the theoretical maximum) last longer and have fewer voids or inclusions, so they provide better films.

The "Yield" data in the third column represents the number of target atoms sputtered (ejected from the target) per argon ion striking the target with a kinetic energy of 600 ev. This energy is typical for an argon plasma. Magnetron design factors such as the magnetic field strength (and process parameters such as gas composition and pressure) will affect these data, of course. But they remain useful for comparison purposes.

The "Rate" data are representative of the film deposition rate at maximum power density (i.e. about 250 w/in2, with direct cooling) and a 4" source to substrate distance. The rates will decrease linearly with lower power levels. With all other factors unchanged, the film deposition rate will:

  • Decrease by approximately 25% per inch beyond the 4" source to substrate distance.
  • Increase by approximately 35% per inch closer than the 4" substrate distance.
Target Material Density (g/cc) Yield @ 600 ev Rate* (Å/sec)
Ag 10.5 3.4 380
Al 2.7 1.2 170
Al98Cu2 2.82   170
Al2O3 3.96   40
Al99Si1 2.66   160
Au 19.31 2.8 320
Be 1.85 0.8 100
B4C 2.52   20
BN  2.25   20
C  2.25 0.2 20
Co 8.9 1.4 190
Cr 7.2 1.3 180
Cu 8.92 2.3 320
Fe 7.86 1.3 180
Ge  5.35 1.2 160
Hf 13.31 0.8 110
In 7.3   800
In2O3 7.18   20
ITO  7.1   20
Ir 22.42 1.2 135
Mg 1.74 1.4 200
MgO 3.58   20
Mn  7.2 1.3 180
Mo 10.2 0.9 120
MoS2 4.8   40
MoSi2 6.31   110
Nb 8.57 0.6 80
Ni 8.9 1.5 190
Ni81Fe19 8.8   110
Ni80Cr20 8.5   140
Ni93V7 8.6   100
Os 22.48 0.9 120
Pd 12.02 2.4 270
Pt  21.45 1.6 205
Re  20.53 0.9 120
Rh  12.4 1.5 190
Ru 12.3 1.3 180
Si 2.33 0.5 80
SiC  3.22   50
SiO2 2.63   70
Si3N4 3.44   40
Sn 5.75   800
SnO 6.45   20
Ta 16.6 0.6 85
TaN 16.3   40
Ta2O5 8.2   40
Th 11.7 0.7 85
Ti 4.5 0.6 80
TiN  5.22   40
TiO2 4.26   40
U 19.05 1 155
V 5.96 0.7 85
W 19.35 0.6 80
W90Ti10 14.6   80
WC 15.63   50
Y  4.47 0.6 85
YBCO  5.41   10
Zn 7.14   340
ZnO 5.61   40
ZnS  3.98   10
Zr  6.49 0.7 85
ZrO2 5.6   40

* The above rates are provided as a comparison. Specific deposition rates will vary based upon system design and process parameters.